Bipolartransistor-Arrays, vorgespannt

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Vorbeschaltete Bipolartransistor-Arrays

TomatoElec liefert vorbeschaltete Bipolartransistor-Arrays für Industrie, Automotive, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete BJT-Array-Produkte für Schalt-, Signalsteuerungs- und kompakte Schaltungsintegrationsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung vorbeschalteter Bipolartransistor-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistor-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket
RN2904FE,LF

RN2904FE,LF

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

4,000 -
RFQ
RN2904FE,LF Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 100mW - - Surface Mount ES6
RN2907FE,LF(CT

RN2907FE,LF(CT

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

4,000 -
RFQ
RN2907FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 100mW - - Surface Mount ES6
RN2910FE,LF(CT

RN2910FE,LF(CT

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

4,000 -
RFQ
RN2910FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN4904FE,LF(CT

RN4904FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

4,000 -
RFQ
RN4904FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 100mW - - Surface Mount ES6
RN4981FE,LF(CT

RN4981FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

4,000 -
RFQ
RN4981FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 4.7kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 100mW - - Surface Mount ES6
RN2902FE,LF(CT

RN2902FE,LF(CT

TRANS 2PNP PREBIAS 0.2W ES6

Toshiba Semiconductor and Storage

3,978 -
RFQ
RN2902FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 200mW - - Surface Mount ES6
RN4907FE,LF(CT

RN4907FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,880 -
RFQ
RN4907FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 100mW - - Surface Mount ES6
RN4986FE,LF(CT

RN4986FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,745 -
RFQ
RN4986FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 100mW - - Surface Mount ES6
RN4990FE,LF(CT

RN4990FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,710 -
RFQ
RN4990FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz, 200MHz 100mW - - Surface Mount ES6
RN4906FE,LF(CT

RN4906FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,670 -
RFQ
RN4906FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN1911,LF(CT

RN1911,LF(CT

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN1911,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount US6
RN2908,LF(CT

RN2908,LF(CT

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN2908,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 200mW - - Surface Mount US6
RN2910,LF(CT

RN2910,LF(CT

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN2910,LF(CT Datenblatt - SC-61AA Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 200mW - - Surface Mount SMQ
RN4903,LF(CT

RN4903,LF(CT

PNP + NPN BRT Q1BSR22KOHM Q1BER2

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN4903,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 200mW - - Surface Mount US6
RN4908,LF(CT

RN4908,LF(CT

PNP + NPN BRT Q1BSR10KOHM Q1BER4

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN4908,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 200mW - - Surface Mount US6
RN4909,LF(CT

RN4909,LF(CT

PNP + NPN BRT Q1BSR22KOHM Q1BER4

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN4909,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 200mW - - Surface Mount US6
RN4911,LF(CT

RN4911,LF(CT

PNP + NPN BRT Q1BSR4.7KOHM Q1BER

Toshiba Semiconductor and Storage

3,000 -
RFQ
RN4911,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz, 250MHz 100mW - - Surface Mount ES6
RN1908,LF(CT

RN1908,LF(CT

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Toshiba Semiconductor and Storage

2,995 -
RFQ
RN1908,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz 200mW - - Surface Mount US6
RN4982FE,LF(CT

RN4982FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

2,975 -
RFQ
RN4982FE,LF(CT Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ES6
RN1901,LF(CT

RN1901,LF(CT

TRANS 2NPN PREBIAS 0.2W US6

Toshiba Semiconductor and Storage

2,967 -
RFQ
RN1901,LF(CT Datenblatt - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms 1kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 200mW - - Surface Mount US6
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