Bipolartransistor-Arrays, vorgespannt

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Vorbeschaltete Bipolartransistor-Arrays

TomatoElec liefert vorbeschaltete Bipolartransistor-Arrays für Industrie, Automotive, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete BJT-Array-Produkte für Schalt-, Signalsteuerungs- und kompakte Schaltungsintegrationsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung vorbeschalteter Bipolartransistor-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistor-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket
RN2911FE(TE85L,F)

RN2911FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,975 -
RFQ
RN2911FE(TE85L,F)

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ES6
RN1909FE(TE85L,F)

RN1909FE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,948 -
RFQ
RN1909FE(TE85L,F)

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ES6
EMB60T2R

EMB60T2R

PNP+PNP DIGITAL TRANSISTOR (WITH

Rohm Semiconductor

18,500 -
RFQ
EMB60T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP Pre-Biased (Dual) 100mA 50V 2kOhms 47kOhms 80 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA 250MHz 150mW - - Surface Mount EMT6
NSBC143ZPDP6T5G

NSBC143ZPDP6T5G

TRANS 2NPN PREBIAS 0.339W SOT963

onsemi

16,000 -
RFQ
NSBC143ZPDP6T5G

Datenblatt

- SOT-963 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 1mA, 10mA 500nA - 339mW - - Surface Mount SOT-963
EMB53T2R

EMB53T2R

PNP+PNP DIGITAL TRANSISTOR (WITH

Rohm Semiconductor

8,000 -
RFQ
EMB53T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP Pre-Biased (Dual) 100mA 50V 4kOhms - 100 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA (ICBO) 250MHz 150mW - - Surface Mount EMT6
EMH53T2R

EMH53T2R

NPN+NPN DIGITAL TRANSISTOR(WITH

Rohm Semiconductor

7,923 -
RFQ
EMH53T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 100 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA (ICBO) 250MHz 150mW - - Surface Mount EMT6
EMH52T2R

EMH52T2R

NPN+NPN DIGITAL TRANSISTOR(WITH

Rohm Semiconductor

7,705 -
RFQ
EMH52T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 47kOhms 47kOhms 80 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA 250MHz 150mW - - Surface Mount EMT6
EMB59T2R

EMB59T2R

PNP+PNP DIGITAL TRANSISTOR (WITH

Rohm Semiconductor

6,880 -
RFQ
EMB59T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA 250MHz 150mW - - Surface Mount EMT6
NSVBC114YPDXV6T1G

NSVBC114YPDXV6T1G

TRANS PREBIAS NPN/PNP 50V SOT563

onsemi

7,560 -
RFQ
NSVBC114YPDXV6T1G

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 500mW Automotive AEC-Q101 Surface Mount SOT-563
DDC124EU-7-F

DDC124EU-7-F

TRANS 2NPN PREBIAS 0.2W SOT363

Diodes Incorporated

8,573 -
RFQ
DDC124EU-7-F

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 22kOhms 22kOhms 56 @ 5mA, 5V 300mV @ 500µA, 10mA 500nA 250MHz 200mW - - Surface Mount SOT-363
NSBC123JDXV6T1G

NSBC123JDXV6T1G

TRANS PREBIAS 2NPN 50V SOT563

onsemi

7,750 -
RFQ
NSBC123JDXV6T1G

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 2.2kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 500mW - - Surface Mount SOT-563
DDA143TU-7-F

DDA143TU-7-F

TRANS 2PNP PREBIAS 0.2W SOT363

Diodes Incorporated

6,844 -
RFQ
DDA143TU-7-F

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 100 @ 1mA, 5V 300mV @ 250µA, 2.5mA - 250MHz 200mW - - Surface Mount SOT-363
NSBC144EDXV6T1G

NSBC144EDXV6T1G

TRANS PREBIAS 2NPN 50V SOT563

onsemi

6,000 -
RFQ
NSBC144EDXV6T1G

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 47kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 500mW - - Surface Mount SOT-563
RN4902,LXHF(CT

RN4902,LXHF(CT

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Toshiba Semiconductor and Storage

5,980 -
RFQ
RN4902,LXHF(CT

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 50 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 200mW Automotive AEC-Q101 Surface Mount US6
UMH1N-TP

UMH1N-TP

TRANS 2NPN PREBIAS 0.15W SOT363

Micro Commercial Co

3,000 -
RFQ
UMH1N-TP

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 22kOhms 22kOhms 56 @ 5mA, 5V 300mV @ 500µA, 10mA 500nA 250MHz 150mW - - Surface Mount SOT-363
RN2703JE(TE85L,F)

RN2703JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage

31,310 -
RFQ
RN2703JE(TE85L,F)

Datenblatt

- SOT-553 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 22kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ESV
RN1701JE(TE85L,F)

RN1701JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage

9,405 -
RFQ
RN1701JE(TE85L,F)

Datenblatt

- SOT-553 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 4.7kOhms 4.7kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ESV
RN2608(TE85L,F)

RN2608(TE85L,F)

TRANS 2PNP PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

6,000 -
RFQ
RN2608(TE85L,F)

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 300mW - - Surface Mount SM6
UMF28NTR

UMF28NTR

TRANS NPN PREBIAS/PNP 0.15W UMT6

Rohm Semiconductor

4,770 -
RFQ
UMF28NTR

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN Pre-Biased, 1 PNP 100mA, 150mA 50V 22kOhms 47kOhms 68 @ 5mA, 5V / 180 @ 1mA, 6V 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA 500nA 250MHz, 140MHz 150mW - - Surface Mount UMT6
RN2712JE(TE85L,F)

RN2712JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage

3,995 -
RFQ
RN2712JE(TE85L,F)

Datenblatt

- SOT-553 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 22kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW - - Surface Mount ESV
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