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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TJ10S04M3L(T6L1,NQ

    TJ10S04M3L(T6L1,NQ

    MOSFET P-CH 40V 10A DPAK

    Toshiba Semiconductor and Storage

    		 1,895 -
    RFQ
    		TJ10S04M3L(T6L1,NQ

    Datenblatt

         		U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    STD3NK50ZT4

    STD3NK50ZT4

    MOSFET N-CH 500V 2.3A DPAK

    STMicroelectronics

    		 1,870 -
    RFQ
    		STD3NK50ZT4

    Datenblatt

         		SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 3.3Ohm @ 1.15A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    TK5P53D(T6RSS-Q)

    TK5P53D(T6RSS-Q)

    MOSFET N-CH 525V 5A DPAK

    Toshiba Semiconductor and Storage

    		 1,710 -
    RFQ
    		TK5P53D(T6RSS-Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    BUK9Y4R8-60RAX

    BUK9Y4R8-60RAX

    BUK9Y4R8-60RA/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,500 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    NVTFS6H854NLWFTAG

    NVTFS6H854NLWFTAG

    MOSFET N-CH 80V 10A/41A 8WDFN

    onsemi

    		 1,454 -
    RFQ
    		NVTFS6H854NLWFTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 902 pF @ 40 V - 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    NVTFS6H854NLTAG

    NVTFS6H854NLTAG

    MOSFET N-CH 80V 10A/41A 8WDFN

    onsemi

    		 1,270 -
    RFQ
    		NVTFS6H854NLTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 902 pF @ 40 V - 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    DIT100N10

    DIT100N10

    MOSFET TO220AB N 100V 0.0099OHM

    Diotec Semiconductor

    		 997 -
    RFQ
    		DIT100N10

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 13mOhm @ 40A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 4800 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    PJP100N06SA-AU_T0_006A1

    PJP100N06SA-AU_T0_006A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 990 -
    RFQ
    		PJP100N06SA-AU_T0_006A1

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    TJ20S04M3L(T6L1,NQ

    TJ20S04M3L(T6L1,NQ

    MOSFET P-CH 40V 20A DPAK

    Toshiba Semiconductor and Storage

    		 935 -
    RFQ
    		TJ20S04M3L(T6L1,NQ

    Datenblatt

         		U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V 3V @ 1mA 37 nC @ 10 V +10V, -20V 1850 pF @ 10 V - 41W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    MCAC65N06YHE3-TP

    MCAC65N06YHE3-TP

    MOSFET N-CH 60 65A DFN5060

    Micro Commercial Co

    		 7,261 -
    RFQ
    		MCAC65N06YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2.5V @ 250µA 34.5 nC @ 10 V ±20V 1740 pF @ 30 V - 100W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    MCAC95N04YHE3-TP

    MCAC95N04YHE3-TP

    MOSFET N-CH 40 95A DFN5060

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCAC95N04YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 4V @ 250µA 27.7 nC @ 10 V ±20V 1709 pF @ 20 V - 75W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    NVMYS3D5N04CTWG

    NVMYS3D5N04CTWG

    MOSFET N-CH 40V 24A/102A LFPAK4

    onsemi

    		 2,954 -
    RFQ
    		NVMYS3D5N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    SI4894BDY-T1-GE3

    SI4894BDY-T1-GE3

    MOSFET N-CH 30V 8.9A 8SO

    Vishay Siliconix

    		 2,500 -
    RFQ
    		SI4894BDY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVTFS5C460NLTAG

    NVTFS5C460NLTAG

    MOSFET N-CH 40V 19A/74A 8WDFN

    onsemi

    		 1,210 -
    RFQ
    		NVTFS5C460NLTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V 2V @ 40µA 11 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    SIRA54DP-T1-GE3

    SIRA54DP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8

    Vishay Siliconix

    		 5,980 -
    RFQ
    		SIRA54DP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.35mOhm @ 15A, 10V 2.3V @ 250µA 48 nC @ 4.5 V +20V, -16V 5300 pF @ 20 V - 36.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STP3NK60Z

    STP3NK60Z

    MOSFET N-CH 600V 2.4A TO220AB

    STMicroelectronics

    		 4,867 -
    RFQ
    		STP3NK60Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8 nC @ 10 V ±30V 311 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    ISZ330N12LM6ATMA1

    ISZ330N12LM6ATMA1

    OPTIMOS 6 POWER-TRANSISTOR,120V

    Infineon Technologies

    		 3,719 -
    RFQ
    		ISZ330N12LM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 5.7A (Ta), 24A (Tc) 3.3V, 10V 33mOhm @ 9A, 10V 2.2V @ 11µA 10.1 nC @ 10 V ±20V 650 pF @ 60 V - 2.5W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
    PJD40P03E-AU_L2_006A1

    PJD40P03E-AU_L2_006A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD40P03E-AU_L2_006A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 33A (Tc) 4.5V, 10V 18.8mOhm @ 20A, 10V 2.5V @ 250µA 22 nC @ 10 V ±25V 1009 pF @ 25 V - 3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    TK5P65W,RQ

    TK5P65W,RQ

    PB-F POWER MOSFET TRANSISTOR DPA

    Toshiba Semiconductor and Storage

    		 1,987 -
    RFQ
    		TK5P65W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C - - Surface Mount DPAK
    DMTH4004LPS-13

    DMTH4004LPS-13

    MOSFET N-CH 40V PWRDI5060

    Diodes Incorporated

    		 1,922 -
    RFQ
    		DMTH4004LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 3V @ 250µA 82.2 nC @ 10 V ±20V 4508 pF @ 20 V - 2.6W (Ta), 138W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
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