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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PJQ5562A_R2_00201

    PJQ5562A_R2_00201

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5562A_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    DMNH4005SPSQ-13

    DMNH4005SPSQ-13

    MOSFET N-CH 40V 80A PWRDI5060-8

    Diodes Incorporated

    		 2,434 -
    RFQ
    		DMNH4005SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 20A, 10V 3V @ 250µA 48 nC @ 10 V 20V 2847 pF @ 20 V - 2.8W -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
    PJL9580_R2_00201

    PJL9580_R2_00201

    150V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJL9580_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PSMN2R0-40YLBX

    PSMN2R0-40YLBX

    PSMN2R0-40YLB/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,500 -
    RFQ
    		PSMN2R0-40YLBX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.1mOhm @ 25A, 10V 2.05V @ 1mA 87 nC @ 10 V ±20V 6416 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    PSMN2R2-40YSBX

    PSMN2R2-40YSBX

    PSMN2R2-40YSB/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,485 -
    RFQ
    		PSMN2R2-40YSBX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 2.2mOhm @ 25A, 10V 3.6V @ 1mA 69 nC @ 10 V ±20V 5173 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    RCJ100N25TL

    RCJ100N25TL

    MOSFET N-CH 250V 10A LPT

    Rohm Semiconductor

    		 990 -
    RFQ
    		RCJ100N25TL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 10A (Tc) 10V 320mOhm @ 5A, 10V 5V @ 1mA 26.5 nC @ 10 V ±30V 1440 pF @ 25 V - 1.56W (Ta), 85W (Tc) 150°C (TJ) - - Surface Mount LPTS
    MCB011N10YL-TP

    MCB011N10YL-TP

    N-CHANNEL MOSFET,D2-PAK

    Micro Commercial Co

    		 1,396 -
    RFQ

    -

    		 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V 3V @ 250µA 29.8 nC @ 10 V ±20V 1404 pF @ 50 V - 100W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    NVTFS4C13NWFTWG

    NVTFS4C13NWFTWG

    MOSFET N-CH 30V 14A 8WDFN

    onsemi

    		 45,000 -
    RFQ
    		NVTFS4C13NWFTWG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 9.4mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 3W (Ta), 26W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    TSM040N03CP ROG

    TSM040N03CP ROG

    MOSFET N-CHANNEL 30V 90A TO252

    Taiwan Semiconductor Corporation

    		 10,000 -
    RFQ
    		TSM040N03CP ROG

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V 2.5V @ 250µA 53 nC @ 4.5 V ±20V 2200 pF @ 25 V - 88W (Tc) 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTMFS5C423NLT3G

    NTMFS5C423NLT3G

    MOSFET N-CH 40V 150A 5DFN

    onsemi

    		 4,988 -
    RFQ
    		NTMFS5C423NLT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    PHB29N08T,118

    PHB29N08T,118

    MOSFET N-CH 75V 27A D2PAK

    Nexperia USA Inc.

    		 3,734 -
    RFQ
    		PHB29N08T,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 27A (Tc) 11V 50mOhm @ 14A, 11V 5V @ 2mA 19 nC @ 10 V ±30V 810 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    XP10TN135H

    XP10TN135H

    MOSFET N-CH 100V 8.1A TO252

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP10TN135H

    Datenblatt

         		XP10TN135 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 8.1A (Tc) 4.5V, 10V 135mOhm @ 5A, 10V 3V @ 250µA 17.6 nC @ 10 V ±20V 928 pF @ 50 V - 2W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    NTMFS5C442NLT3G

    NTMFS5C442NLT3G

    MOSFET N-CH 40V 27A/130A 5DFN

    onsemi

    		 4,999 -
    RFQ
    		NTMFS5C442NLT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 130A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.1W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IPD90N06S4L06ATMA2

    IPD90N06S4L06ATMA2

    MOSFET N-CH 60V 90A TO252-31

    Infineon Technologies

    		 3,357 -
    RFQ
    		IPD90N06S4L06ATMA2

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    NVTFWS024N06CTAG

    NVTFWS024N06CTAG

    MOSFET N-CH 60V 7A/24A 8WDFN

    onsemi

    		 1,500 -
    RFQ
    		NVTFWS024N06CTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 24A (Tc) 10V 22.6mOhm @ 3A, 10V 4V @ 20µA 5.7 nC @ 10 V ±20V 333 pF @ 30 V - 2.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    XP4N4R2H

    XP4N4R2H

    MOSFET N-CH 40V 75A TO252

    YAGEO XSEMI

    		 990 -
    RFQ
    		XP4N4R2H

    Datenblatt

         		XP4N4R2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4.2mOhm @ 40A, 10V 3V @ 250µA 44.8 nC @ 4.5 V ±20V 4000 pF @ 20 V - 2W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    PJQ5431E-AU_R2_006A1

    PJQ5431E-AU_R2_006A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,798 -
    RFQ
    		PJQ5431E-AU_R2_006A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 86A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V 2.5V @ 250µA 68 nC @ 10 V ±25V 3040 pF @ 25 V - 3.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
    NVMYS2D9N04CLTWG

    NVMYS2D9N04CLTWG

    MOSFET N-CH 40V 27A/110A LFPAK4

    onsemi

    		 2,720 -
    RFQ
    		NVMYS2D9N04CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 60µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    R6004RND3TL1

    R6004RND3TL1

    600V 4A TO-252, PRESTOMOS WITH I

    Rohm Semiconductor

    		 2,700 -
    RFQ
    		R6004RND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.73Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 230 pF @ 100 V - 60W (Tc) 150°C (TJ) - - Surface Mount TO-252
    TK5P60W5,RVQ

    TK5P60W5,RVQ

    PB-F POWER MOSFET TRANSISTOR DPA

    Toshiba Semiconductor and Storage

    		 2,000 -
    RFQ

    -

    		 DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 990mOhm @ 2.3A, 10V 4.5V @ 230µA 11.5 nC @ 10 V ±30V 370 pF @ 300 V - 60W (Tc) 150°C - - Surface Mount DPAK
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