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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STL165N4F8AG

    STL165N4F8AG

    AUTOMOTIVE N-CHANNEL 40V, 2.6MOH

    STMicroelectronics

    		 500 -
    RFQ

    -

    		 ECOPACK® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.6mOhm @ 60A, 10V 4V @ 250µA 28 nC @ 10 V ±20V 2400 pF @ 25 V - 111W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    TQM070NH04LCR RLG

    TQM070NH04LCR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TQM070NH04LCR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 54A (Tc) 4.5V, 10V 7mOhm @ 27A, 10V 2.2V @ 250µA 34.5 nC @ 10 V ±16V 2169 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-PDFN (5x6)
    TQM070NH04CR RLG

    TQM070NH04CR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 3,480 -
    RFQ
    		TQM070NH04CR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 54A (Tc) 7V, 10V 7mOhm @ 27A, 10V 3.6V @ 250µA 28.5 nC @ 10 V ±20V 2006 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-PDFN (5x6)
    XP3N9R5AH

    XP3N9R5AH

    MOSFET N-CH 30V 38.5A TO252

    YAGEO XSEMI

    		 992 -
    RFQ
    		XP3N9R5AH

    Datenblatt

         		XP3N9R5A TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 38.5A (Ta) 4.5V, 10V 9.5mOhm @ 20A, 10V 3V @ 250µA 14.4 nC @ 4.5 V ±20V 1280 pF @ 15 V - 2W (Ta), 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    SIHD2N80AE-GE3

    SIHD2N80AE-GE3

    MOSFET N-CH 800V 2.9A DPAK

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SIHD2N80AE-GE3

    Datenblatt

         		E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2.9A (Tc) 10V 2.9Ohm @ 500mA, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 180 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NVTYS003N04CLTWG

    NVTYS003N04CLTWG

    T6 40V N-CH LL IN LFPAK33

    onsemi

    		 3,000 -
    RFQ
    		NVTYS003N04CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 106A (Tc) 4.5V, 10V 3.4mOhm @ 40A, 10V 2V @ 60µA 36 nC @ 10 V ±20V 2240 pF @ 25 V - 3.2W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    DMTH4007SPSQ-13

    DMTH4007SPSQ-13

    MOSFET N-CH 40V 15.7A PWRDI5060

    Diodes Incorporated

    		 2,491 -
    RFQ
    		DMTH4007SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15.7A (Ta), 100A (Tc) 10V 7.6mOhm @ 20A, 10V 4V @ 250µA 41.9 nC @ 10 V ±20V 2082 pF @ 25 V - 2.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
    DMTH3002LPS-13

    DMTH3002LPS-13

    MOSFET N-CH 30V 100A PWRDI5060-8

    Diodes Incorporated

    		 2,450 -
    RFQ
    		DMTH3002LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V 2V @ 1mA 77 nC @ 10 V ±16V 5000 pF @ 15 V - 1.2W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
    DI040P04D1-AQ

    DI040P04D1-AQ

    MOSFET DPAK P -40V -40A 0.015? 1

    Diotec Semiconductor

    		 2,352 -
    RFQ
    		DI040P04D1-AQ

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 52W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252 (DPAK)
    AOSP21357

    AOSP21357

    MOSFET P-CH 30V 16A 8SOIC

    Alpha & Omega Semiconductor Inc.

    		 2,213 -
    RFQ
    		AOSP21357

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 8.5mOhm @ 16A, 10V 2.3V @ 250µA 70 nC @ 10 V ±25V 2830 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVMFS6H864NLWFT1G

    NVMFS6H864NLWFT1G

    MOSFET N-CH 80V 7A/22A 5DFN

    onsemi

    		 1,480 -
    RFQ
    		NVMFS6H864NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 5A, 10V 2V @ 20µA 9 nC @ 10 V ±20V 431 pF @ 40 V - 3.5W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    NVTFS016N06CTAG

    NVTFS016N06CTAG

    MOSFET N-CH 60V 8A/32A 8WDFN

    onsemi

    		 1,000 -
    RFQ
    		NVTFS016N06CTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 32A (Tc) 10V 16.3mOhm @ 5A, 10V 4V @ 25µA 6.9 nC @ 10 V ±20V 489 pF @ 30 V - 2.5W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    TSM060NB06LCZ C0G

    TSM060NB06LCZ C0G

    60V, 111A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 3,980 -
    RFQ
    		TSM060NB06LCZ C0G

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 111A (Tc) 4.5V, 10V 6mOhm @ 13A, 10V 2.5V @ 250µA 107 nC @ 10 V ±20V 6273 pF @ 30 V - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    R6502END3TL1

    R6502END3TL1

    650V 1.7A TO-252, LOW-NOISE POWE

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		R6502END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 1.7A (Tc) 10V 4Ohm @ 600mA, 10V 4V @ 40µA 6.5 nC @ 10 V ±20V 65 pF @ 25 V - 26W (Tc) 150°C (TJ) - - Surface Mount TO-252
    RD3P01BATTL1

    RD3P01BATTL1

    PCH -100V -10A POWER MOSFET: RD3

    Rohm Semiconductor

    		 2,414 -
    RFQ
    		RD3P01BATTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 6V, 10V 240mOhm @ 5A, 10V 4V @ 1mA 19.4 nC @ 10 V ±20V 660 pF @ 50 V - 25W (Ta) 150°C (TJ) - - Surface Mount TO-252
    R6004KNXC7G

    R6004KNXC7G

    600V 4A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 952 -
    RFQ
    		R6004KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 10.2 nC @ 10 V ±20V 280 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPAN65R650CEXKSA1

    IPAN65R650CEXKSA1

    MOSFET N-CH 650V 10.1A TO220

    Infineon Technologies

    		 462 -
    RFQ
    		IPAN65R650CEXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    TSM60NC620CI C0G

    TSM60NC620CI C0G

    600V, 7A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 3,990 -
    RFQ
    		TSM60NC620CI C0G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 620mOhm @ 2.4A, 10V 5V @ 1mA 15 nC @ 10 V ±20V 506 pF @ 300 V - 46W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    TK5P50D(T6RSS-Q)

    TK5P50D(T6RSS-Q)

    MOSFET N-CH 500V 5A DPAK

    Toshiba Semiconductor and Storage

    		 3,871 -
    RFQ
    		TK5P50D(T6RSS-Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IAUC64N08S5L075ATMA1

    IAUC64N08S5L075ATMA1

    MOSFET_(75V 120V( PG-TDSON-8

    Infineon Technologies

    		 3,580 -
    RFQ
    		IAUC64N08S5L075ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tj) 4.5V, 10V 7.5mOhm @ 32A, 10V 2V @ 30µA 37 nC @ 10 V ±20V 2106 pF @ 40 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-33
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