FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NVMFS6H852NT1G

NVMFS6H852NT1G

MOSFET N-CH 80V 10A/40A 5DFN

onsemi

1,340 -
RFQ
NVMFS6H852NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 40A (Tc) 10V 14.2mOhm @ 10A, 10V 4V @ 45µA 13 nC @ 10 V ±20V 760 pF @ 40 V - 3.6W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
XP60AN750IN

XP60AN750IN

MOSFET N-CH 600V 10A TO220CFM

YAGEO XSEMI

1,000 -
RFQ
XP60AN750IN

Datenblatt

XP60AN750 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 59.2 nC @ 10 V ±30V 2688 pF @ 100 V - 1.92W (Ta), 36.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1

MOSFET_(20V 40V)

Infineon Technologies

835 -
RFQ
IAUCN04S7N006ATMA1

Datenblatt

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 175A 10V - - 107 nC @ 10 V - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-43
IAUCN04S7L006ATMA1

IAUCN04S7L006ATMA1

MOSFET_(20V 40V)

Infineon Technologies

700 -
RFQ
IAUCN04S7L006ATMA1

Datenblatt

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V - 10V - - 124 nC @ 10 V - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-43
MSJP09N65A-BP

MSJP09N65A-BP

N-CHANNEL MOSFET, TO-220AB(H)

Micro Commercial Co

4,990 -
RFQ
MSJP09N65A-BP

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 960mOhm @ 1.5A, 10V 4V @ 250µA 10.6 nC @ 10 V ±30V 383 pF @ 30 V - 113W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (H)
IAUZ40N10S5L120ATMA1

IAUZ40N10S5L120ATMA1

MOSFET_(75V 120V( PG-TSDSON-8

Infineon Technologies

4,228 -
RFQ
IAUZ40N10S5L120ATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tj) 4.5V, 10V 12mOhm @ 20A, 10V 2.2V @ 27µA 22.6 nC @ 10 V ±20V 1589 pF @ 50 V - 62W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8-33
RQ3L120BKFRATCB

RQ3L120BKFRATCB

NCH 60V 12A, HSMT8AG, POWER MOSF

Rohm Semiconductor

3,490 -
RFQ
RQ3L120BKFRATCB

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 30mOhm @ 12A, 10V 2.5V @ 19µA 7.3 nC @ 10 V ±20V 440 pF @ 30 V - 40W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-HSMT (3.2x3)
DMT10H010SPS-13

DMT10H010SPS-13

MOSFET N-CH 100V PWRDI5060

Diodes Incorporated

1,884 -
RFQ
DMT10H010SPS-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10.7A (Ta), 113A (Tc) 6V, 10V 8.8mOhm @ 13A, 10V 4V @ 250µA 56.4 nC @ 10 V ±20V 4468 pF @ 50 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
PJQ4431EP-AU_R2_002A1

PJQ4431EP-AU_R2_002A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

1,769 -
RFQ
PJQ4431EP-AU_R2_002A1

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 78A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V 2.5V @ 250µA 68 nC @ 10 V ±25V 3040 pF @ 25 V - 2.5W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
DMT10H009LCG-7

DMT10H009LCG-7

MOSFET N-CH 100V 12.4A/47A 8DFN

Diodes Incorporated

1,483 -
RFQ
DMT10H009LCG-7

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 47A (Tc) 4.5V, 10V 8.8mOhm @ 20A, 10V 2.5V @ 250µA 20.2 nC @ 4.5 V ±20V 2309 pF @ 50 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount V-DFN3333-8 (Type B)
XP70SL1K4AH

XP70SL1K4AH

MOSFET N-CH 700V 3.2A TO252

YAGEO XSEMI

998 -
RFQ
XP70SL1K4AH

Datenblatt

XP70SL1K4A TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V 5V @ 250µA 16.8 nC @ 10 V ±20V 608 pF @ 100 V - 2W (Ta), 28.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
NVTFWS030N06CTAG

NVTFWS030N06CTAG

MOSFET N-CH 60V 6A/19A 8WDFN

onsemi

3,159 -
RFQ
NVTFWS030N06CTAG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 19A (Tc) 10V 29.7mOhm @ 3A, 10V 4V @ 13µA 4.7 nC @ 10 V ±20V 255 pF @ 30 V - 2.5W (Ta), 23W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3

MOSFET N-CH 40V 32.3A/109A PPAK

Vishay Siliconix

7,340 -
RFQ
SIRA58ADP-T1-RE3

Datenblatt

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 32.3A (Ta), 109A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 61 nC @ 10 V +20V, -16V 3030 pF @ 20 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
DMTH8008LPSQ-13

DMTH8008LPSQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,120 -
RFQ
DMTH8008LPSQ-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 91A (Tc) 4.5V, 10V 7.8mOhm @ 14A, 10V 2.8V @ 1mA 41.2 nC @ 10 V ±20V 2345 pF @ 40 V - 1.6W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
SIRA72DP-T1-GE3

SIRA72DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

6,000 -
RFQ
SIRA72DP-T1-GE3

Datenblatt

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.4V @ 250µA 30 nC @ 4.5 V +20V, -16V 3240 pF @ 20 V - 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR500DP-T1-UE3

SIR500DP-T1-UE3

N-CHANNEL 30 V (D-S) MOSFET 150

Vishay Siliconix

6,000 -
RFQ
SIR500DP-T1-UE3

Datenblatt

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 85.9A (Ta), 350.8A (Tc) 4.5V, 10V 0.47mOhm @20A, 10V 2.2V @ 250µA 180 nC @ 10 V +16V, -12V 8960 pF @ 15 V - 6.25W (Ta), 104.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR624DP-T1-RE3

SIR624DP-T1-RE3

MOSFET N-CH 200V 5.7A/18.6A PPAK

Vishay Siliconix

5,909 -
RFQ
SIR624DP-T1-RE3

Datenblatt

ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5.7A (Ta), 18.6A (Tc) 7.5V, 10V 60mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1110 pF @ 100 V - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
NVTFS4C08NTWG

NVTFS4C08NTWG

MOSFET N-CH 30V 17A 8WDFN

onsemi

4,950 -
RFQ
NVTFS4C08NTWG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 5.9mOhm @ 30A, 10V 2.2V @ 250µA 18.2 nC @ 10 V ±20V 1113 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IPD65R950CFDATMA2

IPD65R950CFDATMA2

MOSFET N-CH 650V 3.9A TO252-3

Infineon Technologies

2,430 -
RFQ
IPD65R950CFDATMA2

Datenblatt

CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 3.9A (Tc) 10V 950mOhm @ 1.5A, 10V 4.5V @ 200µA 14.1 nC @ 10 V ±20V 380 pF @ 100 V - 36.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
DMTH32M5LPSQ-13

DMTH32M5LPSQ-13

MOSFET N-CH 30V 170A PWRDI5060-8

Diodes Incorporated

2,371 -
RFQ
DMTH32M5LPSQ-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 3V @ 1mA 68 nC @ 10 V ±16V 3944 pF @ 25 V - 3.2W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
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