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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVTYS010N06CLTWG

    NVTYS010N06CLTWG

    T6 60V N-CH LL IN LFPAK33

    onsemi

    		 2,065 -
    RFQ
    		NVTYS010N06CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 51A (Tc) 4.5V, 10V 9.8mOhm @ 25A, 10V 2V @ 35µA 13 nC @ 10 V ±20V 910 pF @ 25 V - 3.1W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    IAUCN04S6N017TATMA1

    IAUCN04S6N017TATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 1,367 -
    RFQ
    		IAUCN04S6N017TATMA1

    Datenblatt

         		OptiMOS™ 6 10-LSOP (0.216", 5.48mm Width) Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Ta), 120A (Tj) 7V, 10V 1.73mOhm @ 60A, 10V 3V @ 40µA 49 nC @ 10 V ±20V 3250 pF @ 25 V - 103W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-LHDSO-10-1
    DIT150N03

    DIT150N03

    MOSFET TO220AB N 30V 0.0023OHM

    Diotec Semiconductor

    		 986 -
    RFQ
    		DIT150N03

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 5000 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SIR5211DP-T1-GE3

    SIR5211DP-T1-GE3

    P-CHANNEL 20 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,995 -
    RFQ
    		SIR5211DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 31.2A (Ta), 105A (Tc) 2.5V, 10V 3.2mOhm @ 10A, 10V 1.5V @ 250µA 158 nC @ 10 V ±12V 6700 pF @ 10 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIJA72ADP-T1-GE3

    SIJA72ADP-T1-GE3

    MOSFET N-CH 40V 27.9A/96A PPAK

    Vishay Siliconix

    		 5,528 -
    RFQ
    		SIJA72ADP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27.9A (Ta), 96A (Tc) 4.5V, 10V 3.42mOhm @ 10A, 10V 2.4V @ 250µA 50 nC @ 10 V +20V, -16V 2530 pF @ 20 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    DI110N04PQ-AQ

    DI110N04PQ-AQ

    MOSFET, POWERQFN 5X6, 40V, 110A,

    Diotec Semiconductor

    		 4,787 -
    RFQ
    		DI110N04PQ-AQ

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2980 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
    PSMN2R5-40YLBX

    PSMN2R5-40YLBX

    PSMN2R5-40YLB/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,500 -
    RFQ
    		PSMN2R5-40YLBX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 2.05V @ 1mA 79 nC @ 10 V ±20V 5627 pF @ 20 V Schottky Diode (Body) 147W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    PSMN2R8-40YSBX

    PSMN2R8-40YSBX

    PSMN2R8-40YSB/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,500 -
    RFQ
    		PSMN2R8-40YSBX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.8mOhm @ 25A, 10V 3.6V @ 1mA 59 nC @ 10 V ±20V 4563 pF @ 20 V Schottky Diode (Body) 147W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IPA60R600P7SE8228XKSA1

    IPA60R600P7SE8228XKSA1

    MOSFET N-CH 600V 6A TO220

    Infineon Technologies

    		 420 -
    RFQ
    		IPA60R600P7SE8228XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    BUK7Y15-60EX

    BUK7Y15-60EX

    MOSFET N-CH 60V 53A LFPAK56

    Nexperia USA Inc.

    		 164 -
    RFQ
    		BUK7Y15-60EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 53A (Tc) 10V 15mOhm @ 15A, 10V 4V @ 1mA 24.5 nC @ 10 V ±20V 1838 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    SIJA58ADP-T1-GE3

    SIJA58ADP-T1-GE3

    MOSFET N-CH 40V 32.3A/109A PPAK

    Vishay Siliconix

    		 5,185 -
    RFQ
    		SIJA58ADP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 32.3A (Ta), 109A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 61 nC @ 10 V +20V, -16V 3030 pF @ 20 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    TPN4R303NL,L1Q

    TPN4R303NL,L1Q

    MOSFET N-CH 30V 40A 8TSON

    Toshiba Semiconductor and Storage

    		 4,990 -
    RFQ
    		TPN4R303NL,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.3mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 34W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
    PJQ5526-AU_R2_002A1

    PJQ5526-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5526-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5433E_R2_00201

    PJQ5433E_R2_00201

    30V P-CHANNEL STANDARD TRENCH MO

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5433E_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJD45N06SA-AU_L2_006A1

    PJD45N06SA-AU_L2_006A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,970 -
    RFQ
    		PJD45N06SA-AU_L2_006A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    NVTYS005N04CLTWG

    NVTYS005N04CLTWG

    T6 40V N-CH LL IN LFPAK33

    onsemi

    		 2,714 -
    RFQ
    		NVTYS005N04CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 75A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V 2V @ 40µA 23.1 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    MCU011N10YL-TP

    MCU011N10YL-TP

    POWER MOSFET

    Micro Commercial Co

    		 2,480 -
    RFQ
    		MCU011N10YL-TP

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1380 pF @ 50 V - 83W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NVMFS027N10MCLT1G

    NVMFS027N10MCLT1G

    PTNG 100V LL SO8FL

    onsemi

    		 5,550 -
    RFQ
    		NVMFS027N10MCLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 7.9A (Ta), 28A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 38µA 11.5 nC @ 10 V ±20V 800 pF @ 50 V - 3.5W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    TPH12008NH,L1Q

    TPH12008NH,L1Q

    MOSFET N-CH 80V 24A 8SOP

    Toshiba Semiconductor and Storage

    		 4,980 -
    RFQ
    		TPH12008NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Tc) 10V 12.3mOhm @ 12A, 10V 4V @ 300µA 22 nC @ 10 V ±20V 1900 pF @ 40 V - 1.6W (Ta), 48W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    RQ7P035ATTCR

    RQ7P035ATTCR

    PCH -100V -3.5A POWER MOSFET : R

    Rohm Semiconductor

    		 2,990 -
    RFQ

    -

    		 - 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 111mOhm @ 3.5A, 10V 2.5V @ 1mA 40 nC @ 10 V ±20V 1540 pF @ 50 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
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