FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RF1S530SM9AS2457

RF1S530SM9AS2457

MOSFET N-CH

Harris Corporation

800 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SH8M2TB1

SH8M2TB1

MOSFET N/P-CH 30V 3.5A 8SOP

Rohm Semiconductor

171 -
RFQ
SH8M2TB1

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel - 30V 3.5A 83mOhm @ 3.5A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
TSM6968SDCA RVG

TSM6968SDCA RVG

MOSFET 2N-CH 20V 6.5A 8TSSOP

Taiwan Semiconductor Corporation

86 -
RFQ

-

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 6.5A (Ta) 22mOhm @ 6.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 950pF @ 10V 1.04W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
TT8J3TR

TT8J3TR

MOSFET 2P-CH 30V 2.5A 8TSST

Rohm Semiconductor

29 -
RFQ
TT8J3TR

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy - 2 P-Channel (Dual) - 30V 2.5A 84mOhm @ 2.5A, 10V 2.5V @ 1mA 4.8nC @ 5V 460pF @ 15V 1.25W 150°C (TJ) - - Surface Mount 8-TSST
FC8J33040L

FC8J33040L

MOSFET 2N-CH 33V 5A WMINI8-F1

Panasonic Electronic Components

100 -
RFQ
FC8J33040L

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 33V 5A 38mOhm @ 2.5A, 10V 2.5V @ 260µA 2.8nC @ 4.5V 220pF @ 10V 1W 150°C (TJ) - - Surface Mount WMini8-F1
ZXMN3AMCTA

ZXMN3AMCTA

MOSFET 2N-CH 30V 3.7A 8DFN

Diodes Incorporated

41 -
RFQ
ZXMN3AMCTA

Datenblatt

- 8-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 3.7A (Ta) 120mOhm @ 2.5A, 10V 3V @ 250µA 2.3nC @ 4.5V 190pF @ 25V 1.7W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3020B-8
SP8K2TB

SP8K2TB

MOSFET 2N-CH 30V 6A 8SOP

Rohm Semiconductor

40 -
RFQ
SP8K2TB

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 30mOhm @ 6A, 10V 2.5V @ 1mA 10.1nC @ 5V 520pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
SMA5131

SMA5131

MOSFET 6N-CH 250V 2A 12SIP

Sanken Electric USA Inc.

81 -
RFQ
SMA5131

Datenblatt

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 2A - - - - - - - - Through Hole 12-SIP
SMA5133

SMA5133

MOSFET 3N/3P-CH 500V 2.5A 12SIP

Sanken Electric USA Inc.

84 -
RFQ
SMA5133

Datenblatt

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 500V 2.5A - - - - - - - - Through Hole 12-SIP
SMA5132

SMA5132

MOSFET 3N/3P-CH 500V 1.5A 12SIP

Sanken Electric USA Inc.

95 -
RFQ
SMA5132

Datenblatt

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 500V 1.5A - - - - - - - - Through Hole 12-SIP
SLA5065 LF830

SLA5065 LF830

MOSFET 4N-CH 60V 7A 15SIP

Sanken Electric USA Inc.

60 -
RFQ
SLA5065 LF830

Datenblatt

- 15-SIP Tube Active MOSFET (Metal Oxide) 4 N-Channel - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 4.8W 150°C (TJ) - - Through Hole 15-SIP
SLA5201

SLA5201

MOSFET 3N/3P-CH 600V 7A 15ZIP

Sanken Electric USA Inc.

98 -
RFQ
SLA5201

Datenblatt

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 600V 7A - - - - - - - - Through Hole 15-ZIP
SPF0004

SPF0004

MOSFET 2N-CH 275V 6A 20HSOP

Sanken Electric USA Inc.

45 -
RFQ
SPF0004

Datenblatt

- 20-PowerSOIC (0.295", 7.50mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 275V 6A (Ta) 260mOhm @ 6A, 10V 2.6V @ 1mA - 960pF @ 10V 2.5W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount 20-HSOP
DF23MR12W1M1B11BPSA1

DF23MR12W1M1B11BPSA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

12 -
RFQ
DF23MR12W1M1B11BPSA1

Datenblatt

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
F423MR12W1M1PB11BPSA1

F423MR12W1M1PB11BPSA1

MOSFET 4N-CH 1200V 50A AG-EASY1B

Infineon Technologies

3 -
RFQ
F423MR12W1M1PB11BPSA1

Datenblatt

EasyPACK™ Module Tray Obsolete MOSFET (Metal Oxide) 4 N-Channel - 1200V (1.2kV) 50A 22.5mOhm @ 50A, 15V 5.5V @ 20mA 124nC @ 15V 3.68nF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
MSCM20XM16F4G

MSCM20XM16F4G

MOSFET 200V 77A SP4

Microchip Technology

6 -
RFQ
MSCM20XM16F4G

Datenblatt

- Module Tube Active - - - 200V 77A (Tc) - - - - - - - - Chassis Mount SP4
MSCSM120TLM31C3AG

MSCSM120TLM31C3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

4 -
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
F411MR12W2M1B76BOMA1

F411MR12W2M1B76BOMA1

MOSFET 4N-CH 1200V AG-EASY1B

Infineon Technologies

8,563 -
RFQ

-

EasyPACK™ CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
APTMC120AM25CT3AG

APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 113A SP3

Microchip Technology

7 -
RFQ
APTMC120AM25CT3AG

Datenblatt

- SP3 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM120TLM16C3AG

MSCSM120TLM16C3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

2 -
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
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